TiO2 / p-Si paste heterojunction fabricated by rapid thermal annealing

TiO2/p-Si paste heterojunction structure, which showed photovoltaic characteristics, was successfully fabricated by rapid thermal annealing (RTA). To reduce the oxidation of Si during RTA, Ti sputtered on p-type paste. It found that RTA condition 1200 °C/2 s enabled to achieve lowest and best crystallization conditions, as well transformation layer into rutile TiO2 phase. observed some molten grain lumps appeared surface sample annealed at °C for 2 s. This phenomenon due melting process particles promoted layer. Typical rectifying characteristics photocurrent density 36 μA/cm2 under AM1.5 were with device study shows an application potential films such devices future solar cell.